REACTION ANALYSIS OF THE FORMATION OF CUINSE2 FILMS IN A PHYSICAL VAPOR-DEPOSITION REACTOR

The reaction kinetics for rite formation of CuInSe2 films by reacting Cu/In layers with elemental selenium are compared with those for H2Se. The species mole fr actions as a function of time in a single Se-sour ce physical vapor deposition (PVD) reactor are found to be essentially the same as those obtained in a chemical vapor deposition (CVD) react or with flowing H2Se, indicating that the same chemical equation repre sentation can be used in both cases. The chemical engineering reaction analysis model developed previously by us is shown to predict adequat ely the experimental data in both reactors. The model is employed to p redict three-source behavior. The effects of rate of species delivery and substrate temperature on the time to make CuInSe2 is presented qua ntitatively. (C) 1998 John Wiley & Sons, Ltd.