MAGNETIC-FIELD SENSOR-BASED ON A THIN-FILM SOI TRANSISTOR

This paper presents a magnetic sensor on thin-film SOI-SIMOX that take s advantage of a previous bipolar structure, the VCBM (voltage-control led bipolar MOS transistor) to improve magnetic response with low powe r consumption. The buried oxide avoids substrate currents, while keepi ng a high relative sensitivity, up to 50% T-1, of the sensor. The pape r introduces the structure and theoretical operation regions for both electric and magnetic features. Experimental results on two devices va lidate the previous analysis, presenting the main figures of merit. Fi nally, the total device efficiency parameter is introduced. (C) 1998 E lsevier Science S.A. All rights reserved.