LOW-STRESS PECVD SIC THIN-FILMS FOR IC-COMPATIBLE MICROSTRUCTURES

A low-temperature, IC-compatible, deposition process for SiC thin film s with low mechanical stress and good passivating properties has been developed. SIC films with excellent etch resistance to various electro lytes have been deposited using a commercial-type PECVD reactor and pa tterned by dry etching in a fluorine-based chemistry. Deposition rates up to 100 nm min(-1) and good uniformity have been measured. A low co mpressive stress (350 MPa) has been obtained for as-deposited films by adjusting the deposition parameters. The stress can be further reduce d (20 MPa) and even shifted into the low tensile region by a post-depo sition anneal at 600 degrees C. Due to their excellent properties, the se SiC thin films can be used as masking layers in various etch proces ses, particularly for deep etching of glass or silicon, and to realize IC-compatible SiC membranes. (C) 1998 Elsevier Science S.A. Ali right s reserved.