ALPHA-SN THIN-FILM GROWN ON GAAS SUBSTRATE BY MBE AND INVESTIGATION OF ITS MULTIQUANTUM-WELL STRUCTURE

alpha-Sn thin films have been grown on GaAs (001) single crystal subst rates by molecular beam epitaxy (MBE). The a-Sn growth process has bee n characterized in situ by reflection high energy electron diffraction (RHEED), and the transmission electron microscope (TEM) was used to a nalyze the interface structures. The measurement results indicate that our metastable alpha-Sn films have both higher temperature stability which increases by 30 degrees C (from 70 to 100 degrees C) and thickne ss stability which increases by 200 nm (from 500 to 700 nm) in compari son with previous reports. Other improvements in electrical properties have also been observed. In addition, a new model of multiquantum wel l structure has been suggested.