AN IR-RADIOMETER WITH INTERNAL SIGNAL MODULATION

An infrared (IR) radiometer electrical circuit on the basis of photore sistors and photodiodes made of silicon doped with zinc (Si<Zn>) as we ll as the narrow bandgap semiconductor alloy Pb0.78Sn0.22Te is present ed. In the circuit suggested a bridge with the photoreceiver connected to the radiometer input and immediately fed by signal generators func tions as a radiation modulator. The threshold sensitivity turned out o n a recorder is 2.10(-13) W.Hz(-1/2) (for the n(+)-n-n(+) structures m ade of Si<Zn>, (lambda) = 0.8-1.2(mu)m, T = 300K); 1.4.10(-15)W.Hz(-1/ 2) (for p(+)-n-n(+) S-diodes on the basis of Si<Zn>, (lambda) = 0.8-1. 2(mu)m, T = 300K) and 10(-12)W.Hz(1/2) (for photodiodes on the basis o f Pb0.78Sn0.22Te, (lambda) = 8-13 mu m, T = 77K).