SIMULTANEOUS AMPLIFICATION OF TERAHERTZ DIFFERENCE FREQUENCIES BY AN INJECTION-SEEDED SEMICONDUCTOR-LASER AMPLIFIER AT 850 NM

Citation
S. Matsuura et al., SIMULTANEOUS AMPLIFICATION OF TERAHERTZ DIFFERENCE FREQUENCIES BY AN INJECTION-SEEDED SEMICONDUCTOR-LASER AMPLIFIER AT 850 NM, International journal of infrared and millimeter waves, 19(6), 1998, pp. 849-858
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied",Optics
ISSN journal
01959271
Volume
19
Issue
6
Year of publication
1998
Pages
849 - 858
Database
ISI
SICI code
0195-9271(1998)19:6<849:SAOTDF>2.0.ZU;2-M
Abstract
Two-frequency operation of an 850 nm semiconductor optical amplifier w as achieved by simultaneously injection seeding it with two diode lase rs. The two frequencies could be independently amplified without stron g interference when they were separated by more than 10 GHz, and the s pectral purity was preserved by the amplification process. At frequenc y differences below 10 GHz, unbalanced two-frequency output was observ ed, which can be explained by a two-mode interaction driven by the ref ractive index modulation at the beat frequency. The laser system is su itable for the difference-frequency generation of coherent terahertz r adiation in ultra-fast photoconductors or nonlinear optical media.