INDUCED DEFECTS IN A-SI-H A-SINX-H MULTILAYERS BY USE OF EMT AND PAT/

Authors
GU WZ WANG ZC SUN MX
Citation
Wz. Gu et al., INDUCED DEFECTS IN A-SI-H A-SINX-H MULTILAYERS BY USE OF EMT AND PAT/, Superlattices and microstructures, 23(5), 1998, pp. 991-997
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
23
Issue
5
Year of publication
1998
Pages
991 - 997
Database
ISI
SICI code
0749-6036(1998)23:5<991:IDIAAM>2.0.ZU;2-K
Abstract
The induced defects and their distribution in a-Si:H/a-SiNx:H multilay ers are determined using an electromagnetic technique (EMT) and positr on annihilation technique (PAT). It is found that the distributions of the induced defects in the interface regions on both sides of the a-S i:H sublayer are asymmetric and related to the growth direction of the film; a large number of induced defects are found only in the interfa ce region away from the substrate. (C) 1998 Academic Press Limited.