LASER-DRESSED BINDING-ENERGY OF A HYDROGEN IMPURITY IN THE GAAS ALXGA1-XAS NANOSTRUCTURE IN THE PRESENCE OF A STATIC ELECTRIC-FIELD/

We set up a calculation for the ground-state binding energy of an on-c enter hydrogenic impurity in the simultaneous presence of intense high -frequency laser and static electric fields. It is shown that, althoug h the individual external electric fields themselves act in a way to l ower the binding energy of the impurity, one might accomplish a reduct ion of the weakening effects by considering the joint action of the tw o external fields. In addition, the Variations of the binding energy o f the impurity versus the laser held related parameter alpha(o) are ad justed by the external electric held. The position of the impurity bin ding energy maximum moves toward the higher values of alpha(o) on incr easing the static electric field. (C) 1998 Academic Press Limited.