ACCUMULATION LAYER AND INTERFACE EFFECTS IN DOPED NONABRUPT GAAS ALXGA1-XAS SINGLE QUANTUM-WELLS/

The electron energy levels in doped nonabrupt GaAs/AlxGa1-xAs single q uantum wells 100 Angstrom wide are calculated. Interface widths varyin g from zero to four GaAs unit cells are taken into account, as well as band bendings of 0-90 meV. It is shown that interface effects on the energy levels are important and sensitive to the level of doping. When interfaces of only two GaAs unit cells and a band bending of 40 meV a re considered, the ground-state (first excited state) energy level shi fts toward energies as high as 4 meV (20 meV). (C) 1998 Academic Press Limited.