FANO-LIKE ELECTRON-PHONON INTERFERENCE IN DELTA-DOPING GAAS SUPERLATTICES

Authors
PUSEP YA SILVA MTO GALZERANI JC DASILVA SW SCOLFARO LMR ENDERLEIN R QUIVY AA LIMA AP LEITE JR
Citation
Ya. Pusep et al., FANO-LIKE ELECTRON-PHONON INTERFERENCE IN DELTA-DOPING GAAS SUPERLATTICES, Superlattices and microstructures, 23(5), 1998, pp. 1033-1035
Citations number
1
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
23
Issue
5
Year of publication
1998
Pages
1033 - 1035
Database
ISI
SICI code
0749-6036(1998)23:5<1033:FEIIDG>2.0.ZU;2-Q
Abstract
The interaction between electron excitations and LO phonons is studied by Raman seat tering in delta-doping GaAs superlattices. The Raman sp ectra measured close to the E-o + Delta(o) resonance of GaAs present F ano-like coupling of the LO phonons with the quasicontinuum single-par ticle electron excitations. Due to the self-consistent origin of the e lectron-energy spectrum in delta-doping superlattices the resonance of the Fano interference was found to be strongly dependent on the elect ron density as well as the excitation energy. (C) 1998 Academic Press Limited.