EXCITED-STATES OF DONORS BOUND TO X VALLEYS IN GAAS-ALAS TYPE-II STRUCTURES

Authors
WEBER G CARNEIRO GN
Citation
G. Weber et Gn. Carneiro, EXCITED-STATES OF DONORS BOUND TO X VALLEYS IN GAAS-ALAS TYPE-II STRUCTURES, Superlattices and microstructures, 23(5), 1998, pp. 1075-1078
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
23
Issue
5
Year of publication
1998
Pages
1075 - 1078
Database
ISI
SICI code
0749-6036(1998)23:5<1075:EODBTX>2.0.ZU;2-G
Abstract
We calculate the binding energies of 2s donor states bound to X Valley s in type II GaAs-AlAs quantum well structures using an anisotropic va riational method which enables us to take into account the effective m ass anisotropy and quantum confinement. For a comparative study, we us e two sets of effective masses obtained from different measurements [B . Rheinlander et nl., Phys. Stat. Sol. (b) 49, K167 (1972) and M. Goir an et at, Physica B 177, 465 (1992)]. (C) 1998 Academic Press Limited.