ELECTROLUMINESCENCE FROM AMORPHOUS SI SIO2 SUPERLATTICES/

Amorphous Si/SiO2 superlattices, with four periods, have been grown us ing the two-target alternation magnetron sputtering technique. The thi cknesses of SiO2 layers in ail the superlattices are 1.5 nm and those of Si layers in six types of the superlattices are 1.0, 1.4, 1.8, 2.2, 2.6 and 3.0 nm. Visible electroluminescence (EL) has been observed fr om the semitransparent Au film/(amorphous Si/SiO2 superlattice)lp type Si structures at a forward bias of 4V or larger. A broad band with tw o peaks (or shoulders) around 630-650 nm and 510 nm appear in the EL s pectra of the structures. The effects of thicknesses of Si layers in t he amorphous Si/SiO2 superlattices and of input electrical power on th e EL spectra are studied systematically. (C) 1998 Elsevier Science Ltd . All rights reserved.