POINT-DEFECTS IN ACTIVE LAYERS OF TFEL DEVICES BASED ON ZNS

Authors
LOU ZD GEORGOBIANI AN XU Z XU CX TENG F YU L XU XR
Citation
Zd. Lou et al., POINT-DEFECTS IN ACTIVE LAYERS OF TFEL DEVICES BASED ON ZNS, Chinese Science Bulletin, 43(6), 1998, pp. 518-522
Citations number
14
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Chinese Science Bulletin → ACNP
ISSN journal
10016538
Volume
43
Issue
6
Year of publication
1998
Pages
518 - 522
Database
ISI
SICI code
1001-6538(1998)43:6<518:PIALOT>2.0.ZU;2-U
Abstract
Point defects in the active layer of a layered optimization thin film electroluminescent device of ZnS: Er3+ were studied. The results indic ate that besides Er3+ substituting for Zn2+ as luminescent centers, th e dominant point defects are sulfur vacancies, zinc vacancies, shallow donors and deep acceptors. Their influence on electroluminescence is discussed.