REVIEW OF DEFECT INVESTIGATIONS BY MEANS OF POSITRON-ANNIHILATION IN II-VI COMPOUND SEMICONDUCTORS

An overview is given on positron annihilation studies of vacancy-type defects in Cd-and Zn-related II-VI com pound semiconductors. The most noticeable results among the positron investigations have been obtaine d by the study of the indium-or chlorine-related A centers in as-grown cadmium telluride and by the study of the defect chemistry of the mer cury vacancy in Hg1-xCdxTe after post-growth annealing. The experiment s on defect generation and annihilation after low-temperature electron irradiation of II-VI compounds are also reviewed. The characteristic positron lifetimes are given for cation and anion vacancies.