STRONG NORMAL-INCIDENCE INFRARED-ABSORPTION AND PHOTOCURRENT SPECTRA FROM HIGHLY UNIFORM (IN,GA)AS GAAS QUANTUM-DOT STRUCTURES/

The authors report normal-incidence infrared absorption in the wavelen gth rang 12-14 mu m and low temperature (40K) photocurrent spectra fro m an (In,Ga)As/GaAs quantum dot structure. The basic structure consist s of 20 periods of highly uniform (In,Ga)As/GaAs dot arrays. The stron g room temperature absorption indicates the high quality of the superl attice structure; this is considered to be very promising for the fabr ication of high performance, long wavelength photodetectors.