STACKED QUANTUM-DOT TRANSISTOR AND CHARGE-INDUCED CONFINEMENT ENHANCEMENT

Authors
GUO LJ CHOU SY
Citation
Lj. Guo et Sy. Chou, STACKED QUANTUM-DOT TRANSISTOR AND CHARGE-INDUCED CONFINEMENT ENHANCEMENT, Electronics Letters, 34(10), 1998, pp. 1030-1031
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
10
Year of publication
1998
Pages
1030 - 1031
Database
ISI
SICI code
0013-5194(1998)34:10<1030:SQTACC>2.0.ZU;2-2
Abstract
A new quantum dot transistor that has a polysilicon dot floating gate stacked on top of a silicon quantum dot channel has been fabricated. I t is observed that charging of the floating gate not only shifts the t hreshold voltage of the quantum dot transistor, but also significantly increases the peak-to-valley ratio and peak separation in the conduct ance oscillations.