SURFACE RECOMBINATION RELATED FREQUENCY DISPERSION OF CURRENT GAIN INALGAAS GAAS HBTS/

Authors
IHN B LEE J ROH TM KIM YS KIM B
Citation
B. Ihn et al., SURFACE RECOMBINATION RELATED FREQUENCY DISPERSION OF CURRENT GAIN INALGAAS GAAS HBTS/, Electronics Letters, 34(10), 1998, pp. 1031-1033
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
10
Year of publication
1998
Pages
1031 - 1033
Database
ISI
SICI code
0013-5194(1998)34:10<1031:SRRFDO>2.0.ZU;2-M
Abstract
The dispersion effect of current gain related to surface recombination in AlGaAs/GaAs HBTs has been studied. For an HBT with an emitter area of 3 x 20 mu m(2), the surface recombination current-to-total base cu rrent ratio is similar to 0.47 at < 100MHz, and the ratio is decreased to zero at frequencies between 100MHz and 3GHz, clearly indicating th at the current gain is dispersive.