DISLOCATIONS IN 6H-SIC AND THEIR INFLUENCE ON ELECTRICAL-PROPERTIES OF N-TYPE CRYSTALS

By scratching the (0001)Si surface of GH-SiC followed by annealing, di slocations were introduced in the crystal that were subsequently chara cterized by Transmission Electron Microscopy (TEM). Schottky diodes we re then manufactured from the dislocated crystal and their electrical properties were studied by capacitance-voltage (C-V), current-voltage (I-V), and thermally-stimulated capacitance (TSCap) measurements. It w as found that the deformation introduces deep traps mainly located in the upper third of the bandgap promoting a significant increase in the series resistance of the diodes. The as-introduced dislocations were predominantly 30 degrees partials and their core nature was determined to be Si(g) by the technique of Large Angle Convergent Beam Electron Diffraction (LACBED). The compensation effects observed after deformat ion are presumed to be caused not only by Si(g) dislocations but also by the other defects generated during the deformation step.