HYDROGEN MOLECULES IN SILICON LOCATED AT INTERSTITIAL SITES AND TRAPPED IN VOIDS

Citation
B. Hourahine et al., HYDROGEN MOLECULES IN SILICON LOCATED AT INTERSTITIAL SITES AND TRAPPED IN VOIDS, Physical review. B, Condensed matter, 57(20), 1998, pp. 12666-12669
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
57
Issue
20
Year of publication
1998
Pages
12666 - 12669
Database
ISI
SICI code
0163-1829(1998)57:20<12666:HMISLA>2.0.ZU;2-7
Abstract
The vibrational modes of H-2 molecules in Si are found using a first-p rinciples method and compared with recent experimental investigations. The isolated molecule is found to lie at a T-d interstitial site, ori ented along [011] and is infrared active. The rotational barrier is at least 0.17 eV. The molecular frequency is a sensitive function of cag e size and increases to lie close to the gas value for cages about 50% larger than the T-d site. It is suggested that Raman-active modes aro und 4158 cm(-1) are due to molecules within voids.