SILICON-RICH-METHACRYLATE BILAYER RESIST FOR 193-NM LITHOGRAPHY

Authors
BLAKENEY A GABOR A WHITE D STEINHAUSLER T DEADY W JARMALOWICZ J KUNZ R DEAN K RICH G STARK D
Citation
A. Blakeney et al., SILICON-RICH-METHACRYLATE BILAYER RESIST FOR 193-NM LITHOGRAPHY, Solid state technology, 41(6), 1998, pp. 69
Citations number
2
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid state technology → ACNP
ISSN journal
0038111X
Volume
41
Issue
6
Year of publication
1998
Database
ISI
SICI code
0038-111X(1998)41:6<69:SBRF1L>2.0.ZU;2-G
Abstract
A prototype bilayer resist system, based on a silicon-containing metha crylate imageable layer and a crosslinked styrenic copolymer undercoat , shows sub-0.15-mu m resolution after 193-nm exposure and O-2 etch. T he resistance to the substrate-etch plasma is better than current DUV resists. Making bilayer resists feasible for sub-0.18-mu m manufacturi ng requires solutions for some recently identified etch process and ma terials issues.