PYROGENIC WET OXIDATION BY RTP

A pyrogenic burner in a conventional RTP system produces H2O gas for t he enhancement of oxide growth in a wet rapid thermal oxidation (WRTO) process on bare silicon and implanted wafers. We determined the growt h rate from the increase in oxide thickness on bare and implanted wafe rs at different process temperatures and compared the results to dry o xidation under similar process conditions. We also determined the infl uence of H2O/O-2 ratio in process gas on the final oxide thickness and compared all the results to theoretical growth models. Ellipsometer m appings of oxide thickness on bare silicon wafers showed the differenc e in temperature sensitivity of the wet and dry processes.