HIGH-THROUGHPUT W TI BARRIER SEQUENTIAL DEPOSITION/

Authors
CASTAN T PEYRE JL BESCHORNER K
Citation
T. Castan et al., HIGH-THROUGHPUT W TI BARRIER SEQUENTIAL DEPOSITION/, Solid state technology, 41(6), 1998, pp. 127
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid state technology → ACNP
ISSN journal
0038111X
Volume
41
Issue
6
Year of publication
1998
Database
ISI
SICI code
0038-111X(1998)41:6<127:HWTBSD>2.0.ZU;2-W
Abstract
A newly developed in situ W/Ti deposition process, using a pulse of dr y air between sequential deposition steps, achieves the same barrier p roperties as those from conventional processing with two separate syst ems. Tests show that such sequential depositions can be done using cur rently fielded process equipment.