Performance of a diode-pumped 5W Nd3+: GdVO4 microchip laser at 1.06 mu m

Authors
Wyss, CP Luthy, W Weber, HP Vlasov, VI Zavartsev, YD Studenikin, PA Zagumennyi, AI Shcherbakov, IA
Citation
Cp. Wyss et al., Performance of a diode-pumped 5W Nd3+: GdVO4 microchip laser at 1.06 mu m, APP PHYS B, 68(4), 1999, pp. 659-661
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS B-LASERS AND OPTICS
ISSN journal
09462171 → ACNP
Volume
68
Issue
4
Year of publication
1999
Pages
659 - 661
Database
ISI
SICI code
0946-2171(199904)68:4<659:POAD5N>2.0.ZU;2-1
Abstract
GdVO4 as a host for neodymium has several advantages for diode pumping in c omparison with other crystals. The absorption cross section of neodymium in GdVO4 is considerably stronger and broader than in YAG. This allows for th e construction of very compact monolithical microchip lasers. In our paper, we report for the first time on a diode-pumped monolithical Nd3+ (1.3 at. %):GdVO4 microchip laser at 1.06 mu m. A maximum output power of 5 W is ach ieved. The temporal and the spectral emission properties are described. The beam propagation properties are studied in detail.