Here we describe a strategy toward constructing semiconductor photonic dots
in the ultraviolet to blue region. An array of ZnS dots was grown on a GaA
s substrate with a selective growth method. The ZnS dots have a pyramidal s
tructure with the base plane of 800 nm square and the height of 300 nm. The
{034} crystallographic planes form the sidewalls of the pyramids. Therefor
e, the size of the pyramidal dots is uniquely determined by the mask patter
ning. The optical reflection spectra showed clear resonance peaks which are
reasonably assigned by the calculation of the resonance modes. Each resona
nce showed the Q values on the order of 160-300, a reasonable value to obse
rve the modification of the total spontaneous emission rate in this kind of
photonic dots. (C) 1999 American Institute of Physics. [S0003-6951(99)0361
4-1].