Aluminum gallium nitride short-period superlattices doped with magnesium

Short-period superlattices consisting of alternating layers of GaN:Mg and A lGaN:Mg were grown by low-pressure organometallic vapor phase epitaxy. The electrical properties of these superlattices were measured as a function of temperature and compared to conventional AlGaN:Mg layers. It is shown that the optical absorption edge can be shifted to shorter wavelengths while lo wering the acceptor ionization energy by using short-period superlattice st ructures instead of bulk-like AlGaN:Mg. (C) 1999 American Institute of Phys ics. [S0003-6951(99)03714-6].