Evolution of {311} type defects in boron-doped structures: Experimental evidence of boron-interstitial cluster formation

Boron-doped well structures formed in Czochralski silicon are subjected to a self-implant and various anneals to form a population of type {311} defec ts. Quantitative transmission electron microscopy is then used to measure t he residual interstitials trapped in the {311} defects as a function of bor on concentration and anneal temperature. We have found a strong tendency fo r increased dissolution rates of {311} type defects at boron concentrations above 10(18) cm(-3), providing direct evidence for the formation of boron- interstitial clusters. By profiling the samples with secondary ion mass ste ptroscopy and comparing the results to spreading resistance measurements th e degree of deactivation can be determined. (C) 1999 American Institute of Physics. [S0003-6951(99)04810-X].