Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study

Citation
E. Alphandery et al., Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study, APPL PHYS L, 74(14), 1999, pp. 2041-2043
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
14
Year of publication
1999
Pages
2041 - 2043
Database
ISI
SICI code
0003-6951(19990405)74:14<2041:SIQDGO>2.0.ZU;2-Z
Abstract
We report a study of self-assembled quantum dots (QDs) of InSb embedded in a GaSb matrix grown by metalorganic vapor phase deposition. Growth temperat ures and deposition times have been optimized for maximal photoluminescence peak intensities. Photoluminescence (PL), magneto-PL, and atomic force mic roscopy (AFM) have been performed to estimate the size of the QDs. The quan tum dots luminesce in the midinfrared at around 0.73 eV. The application of magnetic fields up to 15 T both parallel and perpendicular to the growth d irection enhanced the wetting layer and bulk PL intensity and enabled an es timate to be made of the QD height and widths as 2-4 and 20-30 nm, respecti vely. These sizes were confirmed by AFM. (C) 1999 American Institute of Phy sics. [S0003-6951(99)04412-5].