E. Alphandery et al., Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study, APPL PHYS L, 74(14), 1999, pp. 2041-2043
We report a study of self-assembled quantum dots (QDs) of InSb embedded in
a GaSb matrix grown by metalorganic vapor phase deposition. Growth temperat
ures and deposition times have been optimized for maximal photoluminescence
peak intensities. Photoluminescence (PL), magneto-PL, and atomic force mic
roscopy (AFM) have been performed to estimate the size of the QDs. The quan
tum dots luminesce in the midinfrared at around 0.73 eV. The application of
magnetic fields up to 15 T both parallel and perpendicular to the growth d
irection enhanced the wetting layer and bulk PL intensity and enabled an es
timate to be made of the QD height and widths as 2-4 and 20-30 nm, respecti
vely. These sizes were confirmed by AFM. (C) 1999 American Institute of Phy
sics. [S0003-6951(99)04412-5].