Investigation on Ag/Pb(Zr0.53Ti0.47)O-3/YBa2Cu3O7-delta three-terminal system with small gate area

The three-terminal devices Ag/Pb(ZrxTi1-x)O-3/YBa2Cu3O7-delta(Ag/PZT/YBCO) have been fabricated onto (100) SrTiO3 by pulsed laser deposition technique and photolithography. For the purpose of application, we specially selecte d the PZT layer with morphotropic phase boundary composition as the gate to lower the coercive fields and decrease the operating voltage. We tried to minimize the electrode area to 6 X 10(-6) cm(2) for deeply investigating th e leakage problem and getting sufficient polarization of the PZT gate, also for the high integration in future application. From the process, we obtai ned the following results at 64 K: the saturation polarization and the rema nent polarization reach 60 and 41 mu C/cm(2), respectively. The coercive fi eld is lower than 37 kV/cm, and the breakdown field is greater than or equa l to 3 X 10(5) V/cm. The electric field effect measurement shows that the m aximum modulation channel resistance Delta R-DS/R-DS is 3% under the gate v oltage of +/-9 V at 64 K (lower than the zero resistance temperature T-C0, 70 K), at which the superconducting and normal state transition is driven b y channel current I-DS(I-DS>I-c, I-c = 15 mA). (C) 1999 American Institute of Physics. [S0003-6951(99)00114-X].