Ohmic contacts formed by electrodeposition and physical vapor deposition on p-GaN (vol 73, pg 3402, 1998)

Citation
Jm. Delucca et al., Ohmic contacts formed by electrodeposition and physical vapor deposition on p-GaN (vol 73, pg 3402, 1998), APPL PHYS L, 74(14), 1999, pp. 2093-2093
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
14
Year of publication
1999
Pages
2093 - 2093
Database
ISI
SICI code
0003-6951(19990405)74:14<2093:OCFBEA>2.0.ZU;2-R