Charge trap dynamics in a SiO2 layer on Si by scanning capacitance microscopy

Trapped electrons and holes, and their dynamics, were visualized from spati ally resolved capacitance-voltage (C-V) curves and dC/dV images using scann ing capacitance microscopy. A trapped charge of 10(-16) -10(-18) C, localiz ed within 2 mu m diam circular test structures, was imaged. The detrapping process of the trapped electrons can be explained with a quantum-mechanical tunneling model. (C) 1999 American Institute of Physics. [S0003-6951(99)01 513-2].