Photoluminescence study of cavity-polariton-mode splitting using high-contrast selectively oxidized AlAs/GaAs mirrors

Citation
Ar. Pratt et al., Photoluminescence study of cavity-polariton-mode splitting using high-contrast selectively oxidized AlAs/GaAs mirrors, APPL PHYS L, 74(13), 1999, pp. 1869-1871
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
13
Year of publication
1999
Pages
1869 - 1871
Database
ISI
SICI code
0003-6951(19990329)74:13<1869:PSOCSU>2.0.ZU;2-U
Abstract
Photoluminescence (PL) has been used to study cavity-polariton-mode splitti ng in a strongly coupled microcavity that utilizes high-contrast oxidized A lAs/GaAs mirrors. The cavity structure was specifically designed to reduce nonradiative recombination at the oxide-semiconductor interfaces and takes full advantage of the high-contrast mirrors to reduce the effective cavity length, and increase the exciton-photon coupling strength. The cavity-polar iton splitting measured at room temperature was 6.2 meV, which we believe t o be the first ever reported PL splitting measured at room temperature usin g an oxide-based microcavity. The temperature dependence of the cavity-pola riton splitting has also been measured and is well described within a semic lassical polariton model. (C) 1999 American Institute of Physics.