Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate

Authors
Lacombe, D Ponchet, A Frechengues, S Drouot, V Bertru, N Lambert, B Le Corre, A
Citation
D. Lacombe et al., Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate, APPL PHYS L, 74(12), 1999, pp. 1680-1682
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
12
Year of publication
1999
Pages
1680 - 1682
Database
ISI
SICI code
0003-6951(19990322)74:12<1680:FOLFIG>2.0.ZU;2-G
Abstract
Strained Ga0.2In0.8As and InAs islands were grown on a InP(113)B substrate by gas source molecular beam epitaxy and examined by transmission electron microscopy and atomic force microscopy. The islands are mainly bounded by t he low-index facets {001}, {111}B, and {110} [inclination with respect to t he (113)B surface of 25 degrees, 29 degrees, and 31 degrees, respectively]. Some of the consequences of the substrate orientation on the island shape and formation are discussed. (C) 1999 American Institute of Physics. [S0003 -6951(99)01712-X].