Positioning of self-assembled, single-crystal, germanium islands by silicon nanoimprinting

Strain energy from the lattice mismatch of a heteroepitaxial system can cre ate "self-assembled,'' single-crystal islands irregularly arranged on the s urface. Alternatively, features of tens of nanometers can be patterned on a substrate by "nanoimprinting'' using a mold and etching. When these two te chniques are combined, the small patterned features can interact with the s elf-assembly process, causing the islands to form at the patterned features . The resulting regular array of very small islands may be useful for futur e devices. The positioning of single-crystal Ge islands by Si mesas formed by nanoimprinting and etching is demonstrated in this letter. (C) 1999 Amer ican Institute of Physics. [S0003-6951(99)04512-X].