Gw. Phillips et al., Observation of radiation effects on three-dimensional optical random-access-memory materials for use in radiation dosimetry, APPL RAD IS, 50(5), 1999, pp. 875-881
The first experimental investigation has been performed of radiation effect
s on three-dimensional optical random-access-memory materials. Thin films o
f poly(methyl methacrylate) doped with spirobenzopyran were irradiated with
uniform fluxes of protons, alpha-particles and C-12(+3) ions, at fixed ene
rgies per nucleon from 0.5 to 2.5 MeV and fluences from 10(10) to 10(14) cm
(-2). The exposed films were examined under a confocal laser scanning micro
scopy system which is capable of optically sectioning the materials. The ir
radiation resulted in a permanent change in the materials from a nonfluores
cent form to a form which is fluorescent under both 488 and 514 nm excitati
on. Profiles were measured of fluorescent intensity versus depth, and of in
tensity versus dose. It was found that both the particle energy and the dos
e can be obtained from measuring the width of the depth profile and the flu
orescent intensity. These properties are very promising for dosimetry appli
cations since they allow calculation of an accurate dose equivalent. (C) 19
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