Different sp(3) content diamond-like carbon films are deposited on to highl
y n-doped Si(111) substrates by a new plasma deposition technique-filtered
are deposition. Their electron field emission properties are studied by usi
ng a simple diode structure. It is showed that the turn-on field is decreas
ed and field emission current density is increased with the increasing sp3
content (75-80%, 80-83%, and 88-90%) of the films. Field emission current o
f 0.1 mu A from the three samples was detected under the electric field of
10.1, 5.6, and 2.9 V/mu m and emission current density of 4.4, 15.2, and 43
.2 mu A/cm(2), respectively, under 14.3 V/mu m. Fowler-Nordheim (F-N) plots
of the three samples nearly show of lineaity indicating that electron fiel
d emission obeys F-N theory.