Cubic boron nitride films with low stress

We report a cubic boron nitride (c-BN) film with low stress. Infrared (IR) peak position of c-BN at 1006.3 cm(-1) measured by IR spectroscopy shows th at the c-BN film has very low internal stress which leads to an excellent a dhesion. Transmission electron microscope micrograph indicates the only BN phase on the surface of the film is c-BN phase. It is clearly seen from IR spectra that the intermediate layer between the substrate and the c-BN laye r is of the molecular crystal explosion boron nitride, hexagonal boron nitr ide, and wurtzic boron nitride.