L. Kobotiatis et al., Study of the electrochemical behaviour of the 7075 aluminum alloy in the presence of sodium oxalate, CORROS SCI, 41(5), 1999, pp. 941-957
The formation of oxide layers on aluminum and its alloys has a protective f
unction. Protective oxide layers may be formed by various processes and may
be promoted in the presence of chemical compounds present at the metal/wat
er interface. In the present work, the electrochemical behavior of aluminum
alloy 7075 in the presence of aqueous oxalate solutions in the concentrati
on range between 10-80 mM was studied by open circuit potential, polarizati
on and ac impedance measurements. It was found that the oxalate ions presen
t in the solutions promoted passivation of the specimens surface. The passi
vation was attributed to the formation of a resistive oxide layer which was
thicker than the corresponding layer formed in distilled water. This findi
ng was confirmed by XPS measurements. Since the interaction between the ani
onic species, such as the oxalate ions, with the metal and or oxide surface
s seem to play an important role, the influence of the duration of immersio
n and of the concentration of the aqueous oxalate solutions on the surface
oxide film formation was investigated. It was found that in a treatment pro
cess in which both the immersion time and the oxalate concentration were in
creased, a thicker, more resistive film was formed. In the treatment proces
s of the aluminum alloy specimens with oxalate, the effect of the oxalate c
oncentration on the electrical properties of the surface layer formed durin
g the immersion in the oxalate solutions (increase of oxide resistance upon
increasing oxalate concentration) was revealed when testing solutions of t
he same concentration (10 mM) in sodium oxalate were used for conducting el
ectrochemical measurements, regardless of the composition of the treating s
olutions. The apparently low resistivity observed when the treating and tes
ting solutions had the same, high, oxalate concentration (resulting in solu
tions of high conductivity) was attributed to the porous structure of the s
urface oxide layer. (C) 1999 Elsevier Science Ltd. All rights reserved.