Growth of sapphire crystals of complicated shape

An original apparatus allows the growth of sapphire single crystals with co mplicated forms. Edge-defined Film-fed Growth (EFG) or Stepanov method, Gro wth from an Element of Shape (GES) method, as well as imaginative combined variants of those processes are available with this equipment. Related to t he growth parameters, the duality of the crystals pulled from the melt is i nvestigated in terms of minor gas bubbles distribution and misorientation. X-ray transmission, optical microscopy together with light transmittance me asurements are the tools to make sure of optical applications for those pro ducts.