The microhardness-depth profiles of as-obtained and annealed quartz (substr
ate)-Al (film) structures have been investigated. A layer of constant hardn
ess has been detected beneath the initial interface. This is supposed to re
sult from incorporation of aluminium atoms into the surface layer of the su
bstrate, reduction of SiO2 and diffusion of the atoms of a certain element
during the processes of preparing and rapid thermal annealing of the struct
ures.