The surface band energy of an n-type silicon (n-Si) chip in aqueous solutio
n has been modulated by formation of silicon-halogen termination bonds on a
limited area of the Si surface. Such surface asymmetry produces efficient
solar-to-chemical conversion owing to the presence of band bending within t
he n-Si chip in a photostationary state, leading to efficient electron-hole
separation, in contrast to homogeneous semiconductor surfaces. The princip
le can be applied to minute photochemical energy conversion systems made of
nanometer-sized semiconductor particles, organic thin films, and membranes
. (C) 1998 The Electrochemical Society. S1099-0062(98)02-010-0. All rights
reserved.