Silicon epitaxy on Si(100) with adsorbed oxygen

Silicon growth beyond a barrier structure consisting of 1 or 2 nm of silico n sandwiched between adjacent layers of adsorbed oxygen up to 100 langmuir of exposure is epitaxial and free of stacking faults as determined in high resolution X-ray transmission electron microscopy. The process has been rep eated up to nine periods, forming a superlattice called the hetero-epilatti ce-superlattice. This development opens the door to the fabrication of a wi de variety of electronic and optoelectronic structures, and possible applic ation in silicon-on-insulator. (C) 1998 The Electrochemical Society. S1099- 0062(98)03-064-8. All rights reserved.