Formation of 2-D arrays of silicon nanocrystals in thin SiO2 films by very-low energy Si+ ion implantation

Two-dimensional (2-D) arrays of silicon nanocrystals were fabricated in the rmally grown SiO2 films by 1 keV Si-28(+) ion implantation and subsequent t hermal annealing. The nanocrystals characteristics (size, shape, and spatia l distribution) as a function of the implanted dose and annealing condition s were investigated by transmission electron microscopy. The nanocrystals w ere located at a tunneling distance from the oxide surface. With increasing size, the nanocrystals changed from quasi-spheres to faceted platelets. Wi th a reduction in the implantation dose and the annealing temperature, the size of the nanocrystals decreased, their size distribution became more nar row, while their spatial arrangement remained 2-D. (C) 1998 The Electrochem ical Society. S1099-0062(98)02-093-X. All rights reserved.