Electrochemical oxidation of p-silicon of different crystal orientation and
doping density has been investigated in fluoride containing nonaqueous sol
ution of acetonitrile and dimethylformamide. The formation of a macroporous
layer with macropore diameter and length in the micron range in acetonitri
le is observed only if the resistivity of the silicon exceeds similar to 10
Ohm.cm for both (100) and (111) crystal orientations, whereas in dimethylf
ormamide the macroporous layer can be formed on similar to 1 Ohm.cm substra
tes. The influence of water concentration in the electrolyte on the morphol
ogy of the macropores has also been studied. The resistivity of the used el
ectrolyte solutions was measured and compared to that of silicon. Formation
of a macroporous layer is explained by the effective collection of holes a
t the tip of the growing macropores. (C) 1998 The Electrochemical Society,
Inc. S1099-0062(98)01-066-9.