Nondestructive evaluation of interfaces in bonded silicon-on-insulator structures using the picosecond ultrasonics technique

Citation
Hy. Hao et al., Nondestructive evaluation of interfaces in bonded silicon-on-insulator structures using the picosecond ultrasonics technique, EL SOLID ST, 1(1), 1998, pp. 54-55
Citations number
4
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
1
Issue
1
Year of publication
1998
Pages
54 - 55
Database
ISI
SICI code
1099-0062(199807)1:1<54:NEOIIB>2.0.ZU;2-#
Abstract
Picosecond ultrasonic techniques were used to generate and detect acoustic pulses in bonded silicon-on-insulator structures. By simulating the shapes and amplitudes of the acoustic echoes reflected from the Si-SiO2 interfaces , we can characterize the physical properties of the interfaces. We have ob served that via a further thermal annealing process one can change the inte rface quality of a poorly bonded structure. (C) 1998 The Electrochemical So ciety, Inc. S1099-0062(97)12-079-X.