A submicron shifted T-gate process for high breakdown voltage power transistors

A novel submicron gate process is demonstrated which only requires a single lithography step and a single gate recess, providing not only a low resist ance gate metallization but also a wider recess trench on the drain-side fo r high breakdown voltage power applications, This process can replace the c onventional double recess date process with higher through-put and yield. ( C) 1998 The Electrochemical Society, Inc. S1099-0062(98)02-063-X.