Hydrostatic pressure and uniaxial stress in investigations of the EL2 defect in GaAs

Authors
Trautman, P Baj, M Baranowski, JM
Citation
P. Trautman et al., Hydrostatic pressure and uniaxial stress in investigations of the EL2 defect in GaAs, SEM SEMIMET, 54, 1998, pp. 427-455
Citations number
65
Categorie Soggetti
Current Book Contents
Journal title
HIGH PRESSURE IN SEMICONDUCTOR PHYSICS I → ACNP
ISSN journal
00808784
Volume
54
Year of publication
1998
Pages
427 - 455
Database
ISI
SICI code
0080-8784(1998)54:<427:HPAUSI>2.0.ZU;2-7