Performance of thin-film transistors with ultrathin Ni-MILC polycrystalline silicon channel layers

High-performance, low-temperature processed thin-film transistors (TFT's) w ith ultrathin (30-nm) metal induced laterally crystallized (MILC) channel l ayers were fabricated and characterized. Compared with the MILC TFT's with thicker (100 nm) channel layers, the ones with the 30-nm channel layers exh ibit lower threshold voltage, steeper subthreshold slope, and higher transc onductance, Furthermore, the comparatively lower off-state leakage current and the higher on-state current of the "thin" devices also imply a higher o n/off ratio. At a drain voltage of 5 V, an on/off ratio of about 3 x 10(7) was obtained for the 30-nm TFT's, which is about 100 times better than that of the 100-nm TFT's. No deliberate hydrogenation was performed on these de vices.