Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire

Authors
Mathew, SJ Niu, GF Dubbelday, WB Cressler, JD Ott, JA Chu, JO Mooney, PM Kavanagh, KL Meyerson, BS Lagnado, I
Citation
Sj. Mathew et al., Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire, IEEE ELEC D, 20(4), 1999, pp. 173-175
Citations number
22
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
4
Year of publication
1999
Pages
173 - 175
Database
ISI
SICI code
0741-3106(199904)20:4<173:HCALNI>2.0.ZU;2-3
Abstract
We present the de, ac, and low-frequency noise characteristics of SiGe chan nel pFET's on silicon-on-sapphire (SOS), The Sice pFET's show higher mobili ty, transconductance, and cutoff frequency compared to the Si control devic es. A significant reduction in low-frequency (1/f) noise is observed in the SiGe pFET's, and understood to be the result of a lower border trap densit y sampled at the Fermi-levet due to the valence band offset. The linear g(m ) of the SiGe pFET's at 85 K shows a secondary peak which is attributed to the turn-on of the surface channel.