Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

Authors
Henson, WK Ahmed, KZ Vogel, EM Hauser, JR Wortman, JJ Venables, RD Xu, M Venables, D
Citation
Wk. Henson et al., Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors, IEEE ELEC D, 20(4), 1999, pp. 179-181
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
4
Year of publication
1999
Pages
179 - 181
Database
ISI
SICI code
0741-3106(199904)20:4<179:EOTOTO>2.0.ZU;2-N
Abstract
High-frequency capacitance-voltage (C-V) measurements have been made on ult rathin oxide metal-oxide-semiconductor (MOS) capacitors. The sensitivity of extracted oxide thickness to series resistance and gate leakage is demonst rated. Guidelines are outlined for reliable and accurate estimation of oxid e thickness from C-V measurements for oxides down to 1.4 nm.