Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior

Authors
Ahmari, DA Raghavan, G Hartmann, QJ Hattendorf, ML Feng, M Stillman, GE
Citation
Da. Ahmari et al., Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior, IEEE DEVICE, 46(4), 1999, pp. 634-640
Citations number
19
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
4
Year of publication
1999
Pages
634 - 640
Database
ISI
SICI code
0018-9383(199904)46:4<634:TDOIHB>2.0.ZU;2-3
Abstract
This work describes the temperature dependence of the de and small-signal p erformance of InGaP/GaAs heterojunction bipolar transistors (HBT's) with di fferent collector thicknesses. Detailed analyses of the small-signal perfor mance and the temperature dependence of both de and high-frequency paramete rs are presented. rin HBT delay-time analysis is also presented and justifi ed empirically. In addition, the factors causing the decrease in f(T) with temperature are described, and the variations in collector resistance and c ollector drift velocity with temperature are determined.